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Typical Characteristics T J = 25°C unless otherwise noted
10
I D = -6.7A
3000
8
6
4
V DD = -10V
V DD = -20V
V DD = -30V
1000
C iss
C oss
2
100
f = 1MHz
V GS = 0V
C rss
0
0
4
8
12
16
20
24
50
0.1
1 10
30
Q g , GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10
8
25
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
6
20
V GS = -10V
4
T J = 25 o C
15
10
Limited by Package
2
T J = 125 o C
5
V GS = -4.5V
R θ JC = 3.0 C/W
o
1
0.01
0.1 1
10
30
0
25
50
75
100
125
150
T C , CASE TEMPERATURE ( C )
100
t AV , TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
o
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
FOR TEMPERATURES
100us
V GS = -10V
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
150 – T C
10
1
1ms
10ms
1000
I = I 25
----------------------
125
T C = 25 o C
OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
TJ = MAX RATED
100ms
100
SINGLE PULSE
10
10
10
10
10
10
10
0.1
0.5
LIMITED BY r DS(on) TC = 25 O C
1 10
-V DS , DRAIN to SOURCE VOLTAGE (V)
100
30
-5
-4
-3 -2 -1
t, PULSE WIDTH (s)
0
1
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
FDD4243 Rev.C1
4
www.fairchildsemi.com
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